Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification
- St. Petersburg State Polytechnical University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Comparative study of the effect of successive (up to fluences of 3 x 10{sup 16} cm{sup -2}) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect introduction rates were determined for the two materials. It was found that the rates of defect introduction into FZ-Si and 4 H-SiC (CVD) are close to eachy other ({approx}0.1 cm{sup -1}), which is largely due to the almost identical threshold energies of defect generation.
- OSTI ID:
- 21087920
- Journal Information:
- Semiconductors, Vol. 42, Issue 2; Other Information: DOI: 10.1007/s11453-008-2023-8; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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