Low-temperature transport and ferromagnetism in GaAs-based structures with Mn

Journal Article · Sun Jul 15 04:00:00 EDT 2007 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776107070370· OSTI ID:21075786

Gurin, P V ^[1]; Danilov, Yu A; Malysheva, E I ^[2]; Horikoshi, Y; Onomitsu, K ^[3]

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1. Moscow State University (Russian Federation)
2. Nizhni Novgorod State University, Research Institute of Physics and Engineering (Russian Federation)
3. Waseda University, School of Science and Engineering (Japan)

GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature range 4.2 K {<=} T < 400 K, which is associated with the formation of the Ga{sub 1-x}Mn{sub x}As solid solution and MnAs and Ga{sub 1-y}Mn{sub y} clusters in the sample as a result of rapid high-temperature annealing. At temperatures from 4.2 to approximately 200 K, the anomalous Hall effect associated with additional magnetization of the sample is observed. As the temperature increases from 4.2 K, the colossal negative magnetoresistance is transformed into a positive magnetoresistance at T {approx} 35 K.

• OSTI ID: 21075786
• Journal Information: Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 1 Vol. 105; ISSN JTPHES; ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHARGED-PARTICLE TRANSPORT
FERROMAGNETISM
GALLIUM ARSENIDES
HALL EFFECT
HOLES
LAYERS
MAGNESIUM COMPOUNDS
MAGNETIZATION
MAGNETOMETERS
MAGNETORESISTANCE
MANGANESE ARSENIDES
SOLID SOLUTIONS
SQUID DEVICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K