Synthesis and characterization of {epsilon}-Fe{sub 3}N/GaN, 54/46-composite nanowires
- Department of Chemistry, Indian Institute of Technology, Kanpur 208016, U.P. (India)
- Surface Physics and Nanostructures Group, National Physical Laboratory, New Delhi 110012 (India)
{epsilon}-Fe{sub 3}N/GaN, 54/46-composite nanowires (aspect ratio: 40), with core-shell structure, are synthesized by wet chemical method. Structural and morphological investigations are performed using X-ray diffraction (XRD)-Rietveld analysis and microscopy techniques. The encapsulation of {epsilon}-Fe{sub 3}N by GaN is probed by X-ray photoelectron spectroscopy (XPS). The in-depth profile analysis probes the large interface region consisting both the phases. Although the respective surface oxynitride phases are present, the nitride phases are dominant inside the nanowires. The interface region of the nanowires influences the low temperature magnetic behavior. The superparamagnetic and ferromagnetic fractions coexist even at 5 K, due to the nanowire size distribution. Spin-glass-like collective ordering is observed below 50 K due to the freezing of the localized frustrated spins. Room temperature photoluminescence (PL) reveals the presence of surface states in the GaN shell.
- OSTI ID:
- 21068189
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 2 Vol. 43; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ASPECT RATIO
ENCAPSULATION
GALLIUM NITRIDES
IRON NITRIDES
MAGNETIC PROPERTIES
OPTICAL PROPERTIES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WIRES
SPIN GLASS STATE
SUPERPARAMAGNETISM
SYNTHESIS
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K
WIRES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY