Investigation on damage process of GaAs induced by 1064 nm continuous laser

Journal Article · Fri Feb 01 00:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2841717· OSTI ID:21064529

Haifeng, Qi; Qingpu, Wang; Xingyu, Zhang; Zhaojun, Liu; Jun, Chang; Wei, Xia; Guofan, Jin ^[1]; Zejin, Liu ^[2]

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1. School of Information Science and Engineering, Shandong University, Jinan, 250100 (China)
2. Institute of optoelectronics, National University of Defense Technology, Changsha 410073 (China)

A single crystal GaAs wafer with front face mirror polished was irradiated by a 1064 nm continuous laser experimentally. The damage process was investigated by real-time surface reflectivity and optical distribution monitoring. No evident melting and oxidation occurrence was found and the components of Ga and As almost kept constant during the whole damaging process. The distinct differences from the damage by 532 nm continuous laser were analyzed as well. For the current wavelength, the damage threshold was greatly dependent on the boundary conditions, consequently only an estimated threshold value about 2 kW/cm{sup 2} was obtained.

• OSTI ID: 21064529
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 3; Other Information: DOI: 10.1063/1.2841717; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BOUNDARY CONDITIONS
CRYSTAL GROWTH
DAMAGE
GALLIUM ARSENIDES
MELTING
MONOCRYSTALS
OXIDATION
REFLECTIVITY
SEMICONDUCTOR LASERS
WAVELENGTHS