Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

Journal Article · Thu Nov 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2809417· OSTI ID:21064435

Tchernycheva, Maria; Travers, Laurent; Patriarche, Gilles; Glas, Frank; Harmand, Jean-Christophe; Cirlin, George E; Dubrovskii, Vladimir G ^[1]

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1. Departement OptoGaN, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Universite Paris-Sud, 91405 Orsay cedex (France)

The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ reflection high-energy electron diffraction observations of phase transitions of the catalyst particles indicate that they can be liquid below the eutectic point of the Au-In alloy. The temperature range where the catalyst can be liquid covers the range where we observed nanowire formation (380-430 deg. C). The variation of nanowire growth rate with temperature is investigated. Pure axial nanowire growth is observed at high temperature while mixed axial/lateral growth occurs at low temperature. The change of the InAs nanowire shape with growth duration is studied. It is shown that significant lateral growth of the lower part of the nanowire starts when its length exceeds a critical value, so that their shape presents a steplike profile along their axis. A theoretical model is proposed to explain the nanowire morphology as a result of the axial and lateral contributions of the nanowire growth.

• OSTI ID: 21064435
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BINARY ALLOY SYSTEMS
CATALYSTS
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GOLD ALLOYS
INDIUM ALLOYS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHASE TRANSFORMATIONS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0400-1000 K