Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As{sub 2}S{sub 3}) films and its effect on plasma etching
Journal Article
·
· Journal of Applied Physics
- Centre for Ultrahigh Bandwidth Devices for Optical Systems, Laser Physics Centre, Research School of Physical Science and Engineering, The Australian National University, Canberra 0200 (Australia)
We have observed nanoscale phase separation in amorphous arsenic trisulfide (As{sub 2}S{sub 3}) films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF{sub 4}-O{sub 2} plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etched surfaces comes from the differential chemical attack between different phases in the film.
- OSTI ID:
- 21064405
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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