Low temperature deposition and effect of plasma power on tin oxide thin films prepared by modified plasma enhanced chemical vapor deposition

Journal Article · Mon Oct 01 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2786612· OSTI ID:21062129

Ansari, S G; Dar, M A; Dhage, M S; Kim, Young Soon; Shin, Hyung-Shik; Ansari, Z A ^[1]

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1. School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

This work presents low temperature (200 and 300 deg. C) thin film deposition of tin oxide (SnO{sub 2}) using modified plasma enhanced chemical vapor deposition as a function of radio frequency power (100 - 500 W). Stannic chloride (SnCl{sub 4}) was used as precursor and oxygen (O{sub 2}, 300 SCCM) as reactant gas. Fine granular morphology was observed with tetragonal rutile structure grown along the [110] direction, at all the deposition conditions. Higher plasma power resulted in smoother morphology, improved crystallinity, and enhanced conductivity. Electrical resistivity value of as low as {approx}0.01 {omega} cm was obtained at the deposition temperature of 300 deg. C and 250 W of plasma power.

• OSTI ID: 21062129
• Journal Information: Journal of Applied Physics, Vol. 102, Issue 7; Other Information: DOI: 10.1063/1.2786612; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
MORPHOLOGY
OXYGEN
PLASMA
POWER RANGE 100-1000 W
RADIOWAVE RADIATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TETRAGONAL LATTICES
THIN FILMS
TIN CHLORIDES
TIN OXIDES