In situ observation of oxygen gettering by titanium overlayer on HfO{sub 2}/SiO{sub 2}/Si using high-resolution Rutherford backscattering spectroscopy
Journal Article
·
· Journal of Applied Physics
- Department of Micro Engineering, Kyoto University, Yoshida-Honmachi, Sakyo, Kyoto 606-8501 (Japan)
Oxygen gettering by Ti overlayer (2-8 nm) on a HfO{sub 2}(3 nm)/SiO{sub 2}(1.5 nm)/Si(001) structure was investigated using high-resolution Rutherford backscattering spectroscopy. After deposition of a thin Ti layer, the interfacial SiO{sub 2} layer is reduced by {approx}0.2 nm and the released oxygen is incorporated in Ti layer. Subsequent annealing at 330 deg. C in UHV causes further reduction by 0.1-0.8 nm depending on the Ti layer thickness. In addition to the reduction of the SiO{sub 2} layer, significant oxygen depletion in the HfO{sub 2} layer was observed for thicker Ti layers after annealing.
- OSTI ID:
- 21062099
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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