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Title: Sorption Properties Of RF Reactive Sputtered TiOx Thin Films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2733506· OSTI ID:21057274
;  [1];  [2]
  1. Technical University of Sofia, 8 Kl. Ohridski Blvd, 1756 Sofia (Bulgaria)
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia (Bulgaria)

The present research is focused on the sensing behavior of sputtered titanium oxide (TiOx) thin films. In order to deposit TiOx thin films the method of RF reactive sputtering of titanium target in the presence of oxygen as reactive gas is used. RF sputtering technology for thin film deposition has been elaborated on and the technological conditions during deposition have been optimized to obtain films with good quality. Films of various thicknesses have been deposited on quartz resonators in order to use the quartz crystal microbalance (QCM) method for studying their gas sensing properties. The films' microstructure and physical properties are identified by TEM, Raman and laser elipsometry analysis. The ultimate purpose of the research is to apply TiOx thin films in gas sensors. The sorption properties of various sub-stoichiometric and stoichiometric TiO2 thin films to ammonia and other gases are investigated.

OSTI ID:
21057274
Journal Information:
AIP Conference Proceedings, Vol. 899, Issue 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733506; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English