Structural, Optical and Electrical Properties of Al / SnO2 / p-Si MIS Diodes
Journal Article
·
· AIP Conference Proceedings
- Uludag University, Department of Physics, 16059 Gorukle, Bursa (Turkey)
The absorption-wavelength, basis absorption spectrum and the Current-Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.
- OSTI ID:
- 21057214
- Journal Information:
- AIP Conference Proceedings, Vol. 899, Issue 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733327; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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