Growth and Excitonic Emission of CdSe Ultra-Thin Quantum Wells Without Thickness Fluctuations
Journal Article
·
· AIP Conference Proceedings
- Physics Department, CINVESTAV, Ave. IPN 2508, 07360 Mexico, DF (Mexico)
Due to the cation and anion surface reconstruction properties, one Cd-Se atomic layer epitaxy (ALE) cycle produces a coverage of 0.5 CdSe monolayers. In this work we demonstrate that even when an odd number of cycles are deposited to produce ultra-thin quantum wells, under the appropriate growth conditions, the photoluminescence spectrum indicates the absence of thickness fluctuations. A single excitonic peak is detected in the whole sample.
- OSTI ID:
- 21055072
- Journal Information:
- AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729787; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers
Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments
Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions
Journal Article
·
Thu May 15 00:00:00 EDT 2014
· AIP Conference Proceedings
·
OSTI ID:21055072
Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments
Journal Article
·
Tue Apr 10 00:00:00 EDT 2007
· AIP Conference Proceedings
·
OSTI ID:21055072
Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions
Journal Article
·
Thu May 15 00:00:00 EDT 2014
· AIP Conference Proceedings
·
OSTI ID:21055072