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Title: Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2644698· OSTI ID:21054773
;  [1]; ;  [2];  [3]
  1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)
  2. NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
  3. Universita di Roma 'La Sapienza', P. le Aldo Moro 2, 00185 Rome (Italy)

A Ge pixel array detector (PAD) with 100 segments was used in fluorescence x-ray absorption spectroscopy (XAS) study, probing local structure of high temperature superconducting thin film single crystals. Independent monitoring of individual pixel outputs allows real-time inspection of interference of substrates which has long been a major source of systematic error. By optimizing grazing-incidence angle and azimuthal orientation, smooth extended x-ray absorption fine structure (EXAFS) oscillations were obtained, demonstrating that strain effects can be studied using high-quality data for thin film single crystals grown by molecular beam epitaxy (MBE). The results of (La,Sr)2CuO4 thin film single crystals under strain are related to the strain dependence of the critical temperature of superconductivity.

OSTI ID:
21054773
Journal Information:
AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644698; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English