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Title: Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals

Abstract

A Ge pixel array detector (PAD) with 100 segments was used in fluorescence x-ray absorption spectroscopy (XAS) study, probing local structure of high temperature superconducting thin film single crystals. Independent monitoring of individual pixel outputs allows real-time inspection of interference of substrates which has long been a major source of systematic error. By optimizing grazing-incidence angle and azimuthal orientation, smooth extended x-ray absorption fine structure (EXAFS) oscillations were obtained, demonstrating that strain effects can be studied using high-quality data for thin film single crystals grown by molecular beam epitaxy (MBE). The results of (La,Sr)2CuO4 thin film single crystals under strain are related to the strain dependence of the critical temperature of superconductivity.

Authors:
;  [1]; ;  [2];  [3]
  1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)
  2. NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
  3. Universita di Roma 'La Sapienza', P. le Aldo Moro 2, 00185 Rome (Italy)
Publication Date:
OSTI Identifier:
21054773
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 882; Journal Issue: 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644698; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CRYSTAL STRUCTURE; CUPRATES; FINE STRUCTURE; FLUORESCENCE; GE SEMICONDUCTOR DETECTORS; HIGH-TC SUPERCONDUCTORS; INCIDENCE ANGLE; LANTHANUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; STRAINS; STRONTIUM COMPOUNDS; SUBSTRATES; SUPERCONDUCTIVITY; THIN FILMS; X-RAY SPECTRA; X-RAY SPECTROSCOPY

Citation Formats

Oyanagi, H., Zhang, C., Tsukada, A., Naito, M., and Saini, N. L. Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals. United States: N. p., 2007. Web. doi:10.1063/1.2644698.
Oyanagi, H., Zhang, C., Tsukada, A., Naito, M., & Saini, N. L. Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals. United States. doi:10.1063/1.2644698.
Oyanagi, H., Zhang, C., Tsukada, A., Naito, M., and Saini, N. L. Fri . "Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals". United States. doi:10.1063/1.2644698.
@article{osti_21054773,
title = {Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals},
author = {Oyanagi, H. and Zhang, C. and Tsukada, A. and Naito, M. and Saini, N. L.},
abstractNote = {A Ge pixel array detector (PAD) with 100 segments was used in fluorescence x-ray absorption spectroscopy (XAS) study, probing local structure of high temperature superconducting thin film single crystals. Independent monitoring of individual pixel outputs allows real-time inspection of interference of substrates which has long been a major source of systematic error. By optimizing grazing-incidence angle and azimuthal orientation, smooth extended x-ray absorption fine structure (EXAFS) oscillations were obtained, demonstrating that strain effects can be studied using high-quality data for thin film single crystals grown by molecular beam epitaxy (MBE). The results of (La,Sr)2CuO4 thin film single crystals under strain are related to the strain dependence of the critical temperature of superconductivity.},
doi = {10.1063/1.2644698},
journal = {AIP Conference Proceedings},
number = 1,
volume = 882,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 2007},
month = {Fri Feb 02 00:00:00 EST 2007}
}