Fluorescence XAS using Ge PAD: Application to High-Temperature Superconducting Thin Film Single Crystals
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)
- NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
- Universita di Roma 'La Sapienza', P. le Aldo Moro 2, 00185 Rome (Italy)
A Ge pixel array detector (PAD) with 100 segments was used in fluorescence x-ray absorption spectroscopy (XAS) study, probing local structure of high temperature superconducting thin film single crystals. Independent monitoring of individual pixel outputs allows real-time inspection of interference of substrates which has long been a major source of systematic error. By optimizing grazing-incidence angle and azimuthal orientation, smooth extended x-ray absorption fine structure (EXAFS) oscillations were obtained, demonstrating that strain effects can be studied using high-quality data for thin film single crystals grown by molecular beam epitaxy (MBE). The results of (La,Sr)2CuO4 thin film single crystals under strain are related to the strain dependence of the critical temperature of superconductivity.
- OSTI ID:
- 21054773
- Journal Information:
- AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644698; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
CRYSTAL STRUCTURE
CUPRATES
FINE STRUCTURE
FLUORESCENCE
GE SEMICONDUCTOR DETECTORS
HIGH-TC SUPERCONDUCTORS
INCIDENCE ANGLE
LANTHANUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
STRAINS
STRONTIUM COMPOUNDS
SUBSTRATES
SUPERCONDUCTIVITY
THIN FILMS
X-RAY SPECTRA
X-RAY SPECTROSCOPY