Local Structure around In Atoms in InxGa1-xN Multi-Quantum-Wells Studied by XAFS
Journal Article
·
· AIP Conference Proceedings
- Department of Advanced Physics, Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, (Japan)
- SPring-8/JASRI, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
- Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.
- OSTI ID:
- 21054665
- Journal Information:
- AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644572; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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