Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS

Journal Article · Thu Feb 01 23:00:00 EST 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2644561· OSTI ID:21054658

Honma, Tetsuo ^[1]; Yamamoto, Hajime ^[2]

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1. Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan)
2. Tokyo University of Technology, 1404-1, Katakura, Hachiohji, Tokyo 192-0982 (Japan)

The enormous enhancement of the emission intensity from SrTiO3:Pr3+ by addition of Al or Ga ions was found. In case of Al, it was reported that the emission enhancement is caused by charge compensation and reduction of planar faults in the host lattices. In order to clarify the mechanism of the enhancement of the emission from SrTiO3:Pr3+ by addition of Ga ions, we investigated the local structure of doped Ga ions in SrTiO3:Pr3+ (a red phosphor for Field Emission Display) by XAFS analysis. The XAFS analysis indicates that doped Ga ions substitute for Ti site in the crystal.

• OSTI ID: 21054658
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 882; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTALS
DOPED MATERIALS
FIELD EMISSION
FINE STRUCTURE
GALLIUM IONS
PHOSPHORS
PRASEODYMIUM ALLOYS
STRONTIUM TITANATES
X-RAY SPECTRA
X-RAY SPECTROSCOPY