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Title: Local Bonding Arrangements in Ge2Sb2Te5: Importance of Ge and Te Bonding in Optical Memory Materials

Abstract

Studies of amorphous (a-) semiconductors have been driven by technological advances as well as fundamental theories. Observation of electrical switching, for example, fueled early interest in a-chalcogenides. More recently a-chalcogenide switching has been applied quite successfully to DVD technology where the quest for the discovery of better-suited materials continues. Thus, switching grants researchers today with an active arena of technological as well as fundamental study. On the theoretical front, bond constraint theory and rigidity theory provide a powerful framework for understanding the structure and properties of a-materials. Applications of these theories to switching in a-chalcogenides holds the promise of finding the best composition suited for switching applications. EXAFS spectroscopy is an ideally suited technique to investigate the switching properties of these materials. Results of previous EXAFS experiments will be presented and viewed through the lens of bond constraint theory.

Authors:
 [1]
  1. Physics Department, North Carolina State University, Raleigh, NC 27695-8202 (United States)
Publication Date:
OSTI Identifier:
21054593
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 882; Journal Issue: 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644423; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANTIMONIDES; BINDING ENERGY; CHALCOGENIDES; FINE STRUCTURE; GERMANIUM; GERMANIUM TELLURIDES; GLASS; SEMICONDUCTOR MATERIALS; TELLURIUM; X-RAY SPECTROSCOPY

Citation Formats

Baker, D. A. Local Bonding Arrangements in Ge2Sb2Te5: Importance of Ge and Te Bonding in Optical Memory Materials. United States: N. p., 2007. Web. doi:10.1063/1.2644423.
Baker, D. A. Local Bonding Arrangements in Ge2Sb2Te5: Importance of Ge and Te Bonding in Optical Memory Materials. United States. doi:10.1063/1.2644423.
Baker, D. A. Fri . "Local Bonding Arrangements in Ge2Sb2Te5: Importance of Ge and Te Bonding in Optical Memory Materials". United States. doi:10.1063/1.2644423.
@article{osti_21054593,
title = {Local Bonding Arrangements in Ge2Sb2Te5: Importance of Ge and Te Bonding in Optical Memory Materials},
author = {Baker, D. A.},
abstractNote = {Studies of amorphous (a-) semiconductors have been driven by technological advances as well as fundamental theories. Observation of electrical switching, for example, fueled early interest in a-chalcogenides. More recently a-chalcogenide switching has been applied quite successfully to DVD technology where the quest for the discovery of better-suited materials continues. Thus, switching grants researchers today with an active arena of technological as well as fundamental study. On the theoretical front, bond constraint theory and rigidity theory provide a powerful framework for understanding the structure and properties of a-materials. Applications of these theories to switching in a-chalcogenides holds the promise of finding the best composition suited for switching applications. EXAFS spectroscopy is an ideally suited technique to investigate the switching properties of these materials. Results of previous EXAFS experiments will be presented and viewed through the lens of bond constraint theory.},
doi = {10.1063/1.2644423},
journal = {AIP Conference Proceedings},
number = 1,
volume = 882,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 2007},
month = {Fri Feb 02 00:00:00 EST 2007}
}