Energy-filtered Photoelectron Emission Microscopy (EF-PEEM) for imaging nanoelectronic materials
- CEA LETI-MINATEC, 17, rue des Martyrs, 38054 Grenoble Cedex 09 (France)
Photoelectron-Emission Microscopy (PEEM) is the most promising approach to photoemission-based (XPS, UPS) imaging techniques with high lateral resolution, typically below 100 nm. It has now reached its maturity with a new generation of instruments with energy-filtering capabilities. Therefore UPS and XPS imaging with energy-filtered PEEM (EF-PEEM) can be applied to technologically-relevant samples. UPS images with contrast in local work function, obtained with laboratory UV sources, are obtained in ultra-high vacuum environment with lateral resolutions better than 50 nm and sensitivies of 20 meV. XPS images with elemental and bonding state contrast can show up lateral resolution better than 200 nm with synchrotron excitation. In this paper, we present the principles and capabilities of EF-PEEM and nanospectroscopy. Then, we focus on an example of application to non-destructive work-function imaging of polycrystalline copper for advanced interconnects, where it is shown that EF-PEEM is an alternative to Kelvin probes.
- OSTI ID:
- 21032730
- Journal Information:
- AIP Conference Proceedings, Vol. 931, Issue 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799425; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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