Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si

Journal Article · Wed Sep 26 04:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2799392· OSTI ID:21032721

Goncharova, Lyudmila V; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny ^[1]; Lysaght, Pat S; Bersuker, Gennadi I ^[2]

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1. Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States)
2. Sematech, Austin, Texas 78741 (United States)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

• OSTI ID: 21032721
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 931; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
DEPOSITION
DIELECTRIC MATERIALS
DIFFUSION
ELECTRODES
HAFNIUM OXIDES
INTERFACES
LAYERS
OXYGEN
PERFORMANCE
SCATTERING
SILICON
SILICON IONS
SILICON OXIDES
THIN FILMS
TITANIUM
X-RAY PHOTOELECTRON SPECTROSCOPY