Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction

Journal Article · Wed Sep 26 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2799369· OSTI ID:21032713

Bhargava, Mansi; Wolfe, John C ^[1]; Donner, Wolfgang ^[2]; Srivastava, Aseem ^[3]

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1. Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204 (United States)
2. Department of Physics, University of Houston, Houston, TX 77204-5005 (United States)
3. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 (United States)

We use synchrotron x-ray reflectometry and Bragg diffraction to study silicon loss in the low temperature plasma oxidation of silicon-on-insulator (SOI) wafers. We show that Laue oscillations associated with the Si (004) Bragg peak give the number of Si (004) planes in the device layer to within an experimental error of 0.07 nm and that X-ray reflectometry gives the total thickness of the device layer and the surface oxide to within 0.05 nm. We find that silicon loss in samples processed in two different plasma systems correspond to an increase in total thickness that is consistent with the formation of SiO{sub 2}.

• OSTI ID: 21032713
• Journal Information: AIP Conference Proceedings, Vol. 931, Issue 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799369; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRAGG CURVE
BRAGG REFLECTION
LAYERS
OSCILLATIONS
OXIDATION
PLASMA
SILICON
SILICON OXIDES
SURFACES
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION