Evidence for Strong Breit Interaction in Dielectronic Recombination of Highly Charged Heavy Ions
Journal Article
·
· Physical Review Letters
- Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan)
- Queen's University Belfast, Belfast BT7 1NN (United Kingdom)
- CREST, Japan Science and Technology Agency, Chofu, Tokyo 182-8585 (Japan)
- National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan)
- Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088 (China)
Resonant strengths have been measured for dielectronic recombination of Li-like iodine, holmium, and bismuth using an electron beam ion trap. By observing the atomic number dependence of the state-resolved resonant strength, clear experimental evidence has been obtained that the importance of the generalized Breit interaction (GBI) effect on dielectronic recombination increases as the atomic number increases. In particular, it has been shown that the GBI effect is exceptionally strong for the recombination through the resonant state [1s2s{sup 2}2p{sub 1/2}]{sub 1}.
- OSTI ID:
- 21024789
- Journal Information:
- Physical Review Letters, Vol. 100, Issue 7; Other Information: DOI: 10.1103/PhysRevLett.100.073203; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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