Growth and characterization of vanadium dioxide thin films prepared by reactive-biased target ion beam deposition
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
Using a novel growth technique called reactive bias target ion beam deposition, the authors have prepared highly oriented VO{sub 2} thin films on Al{sub 2}O{sub 3} (0001) substrates at various growth temperatures ranging from 250 to 550 deg. C. The influence of the growth parameters on the microstructure and transport properties of VO{sub 2} thin films was systematically investigated. A change in electrical conductivity of 10{sup 3} was measured at 341 K associated with the well known metal-insulator transition (MIT). It was observed that the MIT temperature can be tuned to higher temperatures by mixing VO{sub 2} and other vanadium oxide phases. In addition, a current/electric-field induced MIT was observed at room temperature with a drop in electrical conductivity by a factor of 8. The current densities required to induce the MIT in VO{sub 2} are about 3x10{sup 4} A/cm{sup 2}. The switching time of the MIT, as measured by voltage pulsed measurements, was determined to be no more than 10 ns.
- OSTI ID:
- 21020894
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 1; Other Information: DOI: 10.1116/1.2819268; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals
Growth control of the oxidation state in vanadium oxide thin films