Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

Journal Article · Mon Feb 18 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2884185· OSTI ID:21016352

Sones, C L; Muir, A C; Ying, Y J; Mailis, S; Eason, R W ^[1]; Jungk, T; Hoffmann, A; Soergel, E ^[2]

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1. Optoelectronics Research Centre, University of Southampton, Highfield, Southampton, SO17 1BJ (United Kingdom)
2. Institute of Physics, University of Bonn, Wegelerstrasse 8, 53115 Bonn (Germany)

Continuous wave ultraviolet laser irradiation at {lambda}=244 nm on the +z face of undoped and MgO doped congruent lithium niobate single crystals has been observed to inhibit ferroelectric domain inversion. The inhibition occurs directly beneath the illuminated regions, in a depth greater than 100 nm during subsequent electric field poling of the crystal. Domain inhibition was confirmed by both differential domain etching and piezoresponse force microscopy. This effect allows the formation of arbitrarily shaped domains in lithium niobate and forms the basis of a high spatial resolution microstructuring approach when followed by chemical etching.

• OSTI ID: 21016352
• Journal Information: Applied Physics Letters, Vol. 92, Issue 7; Other Information: DOI: 10.1063/1.2884185; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC FIELDS
ETCHING
FERROELECTRIC MATERIALS
LASER RADIATION
LASERS
LITHIUM COMPOUNDS
MAGNESIUM OXIDES
MICROSCOPY
MONOCRYSTALS
NANOSTRUCTURES
NIOBATES
SPATIAL RESOLUTION
ULTRAVIOLET RADIATION