Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film

Journal Article · Mon Jan 28 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2839404· OSTI ID:21016297

Peihong, Cheng; Dongsheng, Li; Zhizhong, Yuan; Peiliang, Chen; Deren, Yang ^[1]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

Enhancement of the light emission of ZnO films was observed by coupling through localized surface plasmons. By sputtering Ag islands onto ZnO films, their band gap emission coming through the Ag island films was enhanced by threefolds, while the defect emission was quenched. The enhancement was found to be mainly dependent on the sputtering time of the Ag islands, which is related to the island size. Furthermore, the relative spectral position between the ZnO emission band and the localized surface plasmon resonance bands of Ag islands was found to be decisive for the enhancement or quenching of photoluminescence, indicating that the emission intensity of ZnO films can be controlled by the Ag island size and the localized surface plasmon resonance band position.

• OSTI ID: 21016297
• Journal Information: Applied Physics Letters, Vol. 92, Issue 4; Other Information: DOI: 10.1063/1.2839404; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY GAP
MAGNETIC ISLANDS
PHOTOLUMINESCENCE
PLASMONS
SEMICONDUCTOR MATERIALS
SILVER
SPUTTERING
THIN FILMS
VISIBLE RADIATION
ZINC OXIDES