Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures

Journal Article · Mon Nov 12 04:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2812549· OSTI ID:21016235

Shubina, T V; Toropov, A A; Lublinskaya, O G; Kop'ev, P S; Ivanov, S V; El-Shaer, A; Al-Suleiman, M; Bakin, A; Waag, A; Voinilovich, A; Lutsenko, E V; Yablonskii, G P; Bergman, J P; Pozina, G; Monemar, B ^[1]

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1. Ioffe Physico-Technical Institute, RAN, St. Petersburg 194021 (Russian Federation)

We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnO/ZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands.

• OSTI ID: 21016235
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
LASERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SPECTRA
STIMULATED EMISSION
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
ZINC OXIDES