Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

Journal Article · Mon Dec 03 04:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2811717· OSTI ID:21016201

Chung, T F; Luo, L B; He, Z B; Leung, Y H; Shafiq, I; Yao, Z Q; Lee, S T ^[1]

---

1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)

Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

• OSTI ID: 21016201
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
CATALYSTS
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
HETEROJUNCTIONS
LAYERS
MORPHOLOGY
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION
ZINC OXIDES