Axial and radial growth of Ni-induced GaN nanowires

Journal Article · Mon Aug 27 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2776979· OSTI ID:21016122

Geelhaar, L; Cheze, C; Weber, W M; Averbeck, R; Riechert, H; Kehagias, Th; Komninou, Ph; Dimitrakopulos, G P; Karakostas, Th ^[1]

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1. Qimonda, 81730 Munich, Germany and NaMLab, 01099 Dresden (Germany)

GaN nanowires (NWs) were grown on sapphire by molecular beam epitaxy. NWs form only in the presence of Ni seed particles and only under N-rich conditions. Their length increases linearly with growth time up to about 7.5 {mu}m while their diameter remains almost constant. In contrast, a switch to Ga-rich conditions after NW formation results in radial growth, i.e., the NW diameter increases while lengthening is negligible. These results corroborate the fact that the growth of III-V NWs is governed by the accumulation of group-III atoms in the seeds, while group-V species are not preferentially incorporated at the seeds.

• OSTI ID: 21016122
• Journal Information: Applied Physics Letters, Vol. 91, Issue 9; Other Information: DOI: 10.1063/1.2776979; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
NICKEL
PARTICLES
QUANTUM WIRES
SAPPHIRE
SEMICONDUCTOR MATERIALS