Quantum dot solar cell tolerance to alpha-particle irradiation
- NanoPower Research Laboratories and Microsystems Engineering Department, Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, New York 14623 (United States)
The effects of alpha-particle irradiation on an InAs quantum dot (QD) array and GaAs-based InAs QD solar cells were investigated. Using photoluminescence (PL) mapping, the PL intensity at 872 and 1120 nm, corresponding to bulk GaAs and InAs QD emissions, respectively, were measured for a five-layer InAs QD array which had a spatially varying total alpha-particle dose. The spectral response and normalized current-voltage parameters of the solar cells, measured as a function of alpha-particle fluence, were used to investigate the change in device performance between GaAs solar cells with and without InAs QDs.
- OSTI ID:
- 21013768
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to {approx}7 times) with minimum spectral signature shift
Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a 'nucleation-augmented' method
Journal Article
·
Mon Mar 09 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22395723
Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to {approx}7 times) with minimum spectral signature shift
Journal Article
·
Mon Nov 14 23:00:00 EST 2011
· Materials Research Bulletin
·
OSTI ID:22210092
Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a 'nucleation-augmented' method
Journal Article
·
Mon Jul 26 00:00:00 EDT 2004
· Applied Physics Letters
·
OSTI ID:20632688