In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2789691· OSTI ID:21013716

Koblmueller, G; Fernandez-Garrido, S; Calleja, E; Speck, J S ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Real-time analysis of the growth modes during homoepitaxial (0001) GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer, and step-flow growth modes. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition.

• OSTI ID: 21013716
• Journal Information: Applied Physics Letters, Vol. 91, Issue 16; Other Information: DOI: 10.1063/1.2789691; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PLASMA
PYROLYSIS
SEMICONDUCTOR MATERIALS
SURFACTANTS
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS