Photoelectrochemical property of ZnFe{sub 2}O{sub 4}/TiO{sub 2} double-layered films

Journal Article · Tue Aug 07 04:00:00 EDT 2007 · Materials Research Bulletin

OSTI ID:21000678

Jing, Yin ^[1]; Lijian, Bie ^[1]; Zhihao, Yuan ^[1]

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1. Tianjin University of Technology, Tianjin 300191 (China)

ZnFe{sub 2}O{sub 4}/TiO{sub 2} double-layered films on indium-tin oxide (ITO) substrate were prepared by a dip-coating method, and the optical absorption and photocurrent of the as-prepared films were measured. In the double-layered films, the onset of fundamental absorption edge shifts to a longer wavelength, and even shifts to a longer wavelength than that of ZnFe{sub 2}O{sub 4}-only film as the ZnFe{sub 2}O{sub 4} layer thickness increases. Application of the coupled photoanodes double-layered films composed of ZnFe{sub 2}O{sub 4} and TiO{sub 2} can obviously increase the photocurrent. It was found that the photocurrent density of ZnFe{sub 2}O{sub 4}/TiO{sub 2} double-layered films first increased and then decreased with increasing the ZnFe{sub 2}O{sub 4} layer thickness. A five-fold increase in the photocurrent density was obtained compared with TiO{sub 2}-only films under optimum condition.

• OSTI ID: 21000678
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 8 Vol. 42; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIP COATING
ELECTROCHEMISTRY
INDIUM
LAYERS
NANOSTRUCTURES
PHOTOANODES
SUBSTRATES
SUPERCONDUCTING FILMS
THICKNESS
TIN OXIDES
TITANIUM OXIDES