Nature of V {sup n+} ions in SnO{sub 2}: EPR and photoluminescence studies

Journal Article · Tue Jul 03 04:00:00 EDT 2007 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2006.10.006· OSTI ID:21000666

Ningthoujam, R S ^[1]; Lahiri, Debdutta ^[2]; Sudarsan, V ^[1]; Poswal, H K ^[2]; Kulshreshtha, S K ^[1]; Sharma, Surinder M ^[2]; Bhushan, Brij ^[3]; Sastry, M D ^[4]

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1. Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
2. High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
3. Food Technology Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
4. Physical Research Laboratory, Navarngpura, Ahmedabad (India)

SnO{sub 2} and 5 at.% V doped SnO{sub 2} samples were prepared by citrate-gel method. From Raman study on vanadium doped SnO{sub 2}, the existence of phase separated V{sub 2}O{sub 5} clusters has been established. EPR study on the V doped sample clearly revealed the existence of V{sup 4+} ions, which are incorporated in SnO{sub 2} lattice and the existence of conduction electrons with g = 1.993. For vanadium doped SnO{sub 2} sample, there is a decrease in luminescence at 400 nm and an increase in activation energy of electrical conduction compared to undoped SnO{sub 2}, and this has been attributed to the decrease in oxygen vacancies brought about by the incorporation of V{sup 5+} in the SnO{sub 2} lattice.

• OSTI ID: 21000666
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 7 Vol. 42; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CHEMICAL PREPARATION
CITRATES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON SPIN RESONANCE
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TIN OXIDES
VACANCIES
VANADATES
VANADIUM
VANADIUM IONS
VANADIUM OXIDES