Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy

Journal Article · Sun Apr 15 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2718884· OSTI ID:20982823

Koblmueller, G; Gallinat, C S; Speck, J S ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

The role of thermal instability and In surface coverages on the growth kinetics has been investigated for N-face InN films grown by plasma-assisted molecular beam epitaxy. Film thickness analysis using scanning electron microscopy combined with In desorption measurements by quadrupole mass spectrometry demonstrated significant thermal decomposition starting at {approx}560 degree sign C and inhibiting growth completely beyond {approx}635 degree sign C. Within this temperature region two decomposition pathways were identified: a low-temperature regime characterized by In droplet accumulation and a high-temperature regime with direct desorption from bulk InN. A growth diagram has been constructed, exhibiting three characteristic growth structures for different In/N flux ratios and growth temperatures: a dry no-adlayer terminated surface under N-rich conditions, an In adlayer terminated surface, and a surface, consisting of an In adlayer and droplets under In-rich conditions. Smooth step-flow growth terraces were observed in films grown under In-rich and surprisingly also under N-rich conditions at temperatures of thermal decomposition. Such high adatom diffusivity resulted from the autosurfactant action of the In adlayer, with a saturated coverage of 1 ML as determined from the reflection high energy electron diffraction patterns during the consumption of adsorbed In by active nitrogen.

• OSTI ID: 20982823
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 8; Other Information: DOI: 10.1063/1.2718884; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CHEMISORPTION
CRYSTAL GROWTH
DESORPTION
DROPLETS
ELECTRON DIFFRACTION
INDIUM NITRIDES
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PLASMA
PYROLYSIS
QUADRUPOLES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SURFACTANTS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS