Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]

Journal Article · Thu Feb 01 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2432301· OSTI ID:20982691

Lin, Yow-Jon ^[1]

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1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)

A high work function on indium tin oxide (ITO) surfaces with O{sub 2} inductively coupled plasma (ICP) treatment was obtained in the paper: 'Mechanism for the increase of indium tin oxide work function by O{sub 2} inductively coupled plasma treatment' [Lee et al., J. Appl. Phys. 95, 586 (2004)]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.

• OSTI ID: 20982691
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 3; Other Information: DOI: 10.1063/1.2432301; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AFFINITY
ELECTRON EMISSION
INDIUM OXIDES
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PLASMA
SEMICONDUCTOR MATERIALS
SURFACE TREATMENTS
SYNCHROTRON RADIATION
TIN OXIDES
WORK FUNCTIONS