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Title: Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias

Abstract

In this article, to realize precise control of gas phase and surface reactions for high rate synthesis of high quality microcrystalline silicon ({mu}c-Si) films, influences of source gas supply method and direct current (dc) substrate bias during film deposition process are investigated utilizing a microwave plasma source. It is found that the supply of SiH{sub 4} source gas near the substrate holder significantly enhances the deposition rate and mass density of deposited film and reduces film defect density while maintaining high crystallinity. On the other hand, a negative dc substrate bias induces film crystallization from the initial growth stage. An appropriate negative dc bias also leads to higher film cystallinity and density. Kinetics of the controlling gas phase and surface reactions through the optimizing source gas supply method and dc substrate bias is demonstrated. We claim that the high flux film precursor SiH{sub 3} and H along with less contribution of short-lifetime radicals on the film growing surface and ion-assist structural relaxation benefit the high-rate synthesis of high quality {mu}c-Si films.

Authors:
; ;  [1];  [2];  [3]
  1. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan and Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570 (Japan)
  2. (Japan)
  3. (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 (Japan)
Publication Date:
OSTI Identifier:
20979426
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 11; Other Information: DOI: 10.1063/1.2733739; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTALLIZATION; DEPOSITION; DIRECT CURRENT; MICROWAVE RADIATION; OPTIMIZATION; PLASMA; RELAXATION; SEMICONDUCTOR MATERIALS; SILANES; SILICON; SUBSTRATES; SYNTHESIS; THIN FILMS; VAPORS

Citation Formats

Jia, Haijun, Shirai, Hajime, Kondo, Michio, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, and Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology. Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias. United States: N. p., 2007. Web. doi:10.1063/1.2733739.
Jia, Haijun, Shirai, Hajime, Kondo, Michio, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, & Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology. Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias. United States. doi:10.1063/1.2733739.
Jia, Haijun, Shirai, Hajime, Kondo, Michio, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, and Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology. Fri . "Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias". United States. doi:10.1063/1.2733739.
@article{osti_20979426,
title = {Control of the gas phase and the surface reactions during the high rate synthesis of high quality microcrystalline silicon films: Effects of the source gas supply method and the substrate bias},
author = {Jia, Haijun and Shirai, Hajime and Kondo, Michio and Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570 and Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology},
abstractNote = {In this article, to realize precise control of gas phase and surface reactions for high rate synthesis of high quality microcrystalline silicon ({mu}c-Si) films, influences of source gas supply method and direct current (dc) substrate bias during film deposition process are investigated utilizing a microwave plasma source. It is found that the supply of SiH{sub 4} source gas near the substrate holder significantly enhances the deposition rate and mass density of deposited film and reduces film defect density while maintaining high crystallinity. On the other hand, a negative dc substrate bias induces film crystallization from the initial growth stage. An appropriate negative dc bias also leads to higher film cystallinity and density. Kinetics of the controlling gas phase and surface reactions through the optimizing source gas supply method and dc substrate bias is demonstrated. We claim that the high flux film precursor SiH{sub 3} and H along with less contribution of short-lifetime radicals on the film growing surface and ion-assist structural relaxation benefit the high-rate synthesis of high quality {mu}c-Si films.},
doi = {10.1063/1.2733739},
journal = {Journal of Applied Physics},
number = 11,
volume = 101,
place = {United States},
year = {Fri Jun 01 00:00:00 EDT 2007},
month = {Fri Jun 01 00:00:00 EDT 2007}
}