Coverage dependent reaction of yttrium on silicon and the oxidation of yttrium silicide investigated by x-ray photoelectron spectroscopy

Journal Article · Tue May 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2720849· OSTI ID:20979369

Chiam, S Y; Chim, W K; Huan, A C. H.; Zhang, J; Pan, J S ^[1]

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1. Department of Physics, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2BW (United Kingdom)

The reaction of yttrium (Y) on (001) silicon (Si) with low temperature annealing is investigated for different coverages of Y using in situ x-ray photoelectron spectroscopy. The authors have also performed oxidation studies for Y on Si in the formation of yttrium silicate by a two-step process. This consists of an ex situ oxidation of Y-Si film, which is formed from low temperature annealing in vacuum. These films were then probed with depth profiling x-ray photoelectron spectroscopy. They report on three general reaction phases of Y on Si that are coverage dependent. Different coverages show differences in Si mixing and selective ultrahigh vacuum oxidation. They also report on the self-limiting formation of yttrium silicate at room temperature and low annealing temperature, which is insensitive to the annealing ambient. They also highlight the importance of oxygen partial pressure in both initial silicate formation and the extent of oxidation at different annealing temperatures. Finally, the authors also show that a high oxygen diffusion barrier prevents the oxidation of the entire Y-Si film.

• OSTI ID: 20979369
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 3 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
OXIDATION
OXYGEN
PARTIAL PRESSURE
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
YTTRIUM
YTTRIUM ALLOYS
YTTRIUM SILICATES
YTTRIUM SILICIDES