Effect of ion-irradiation induced defects on the nanocluster Si/Er{sup 3+} coupling in Er-doped silicon-rich silicon oxide
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
The effect of ion-irradiation induced defects on the nanocluster Si/Er{sup 3+} coupling in Er-doped silicon-rich silicon oxide (SRSO) thin film is investigated. Er-doped SRSO, which consists of silicon nanoclusters (nc-Si) in a SiO{sub 2} matrix, was fabricated using electron-cyclotron resonance plasma enhanced chemical vapor deposition using SiH{sub 4} and O{sub 2} with concurrent sputtering of Er followed by a high temperature annealing. Defects were introduced into the film via irradiation with 3 MeV Si ions and subsequently removed by high temperature annealings. The authors find that ion irradiation reduces Er{sup 3+} luminescence from SRSO films, even when the excitation cross section and luminescence efficiency of Er{sup 3+} ions are completely restored. On the other hand, ion irradiation increases the intrinsic nc-Si luminescence and has little effect on the Er{sup 3+} luminescence from a similarly prepared, Er-doped SiO{sub 2} film, indicating that the presence of irradiation induced defects in the initial amorphous film can reduce the number of Er{sup 3+} ions available for nc-Si mediated luminescence by as much as a factor of 3.
- OSTI ID:
- 20972006
- Journal Information:
- Applied Physics Letters, Vol. 91, Issue 2; Other Information: DOI: 10.1063/1.2752538; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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