Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

Journal Article · Mon Jun 18 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2749866· OSTI ID:20971972

Wu, Y S; Cheng, J -H; Peng, W C; Ouyang, H ^[1]

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1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300 (China)

The KrF pulsed excimer laser (248 nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355 nm) have been used to separate GaN thin films from sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied.

• OSTI ID: 20971972
• Journal Information: Applied Physics Letters, Vol. 90, Issue 25; Other Information: DOI: 10.1063/1.2749866; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
DOPED MATERIALS
EXCIMER LASERS
GALLIUM NITRIDES
LEAKAGE CURRENT
LIGHT EMITTING DIODES
NEODYMIUM LASERS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS