Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Journal Article · Mon Apr 23 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2734390· OSTI ID:20971876

Osaka, J; Senthil Kumar, M; Toyoda, H; Ishijima, T; Sugai, H; Mizutani, T ^[1]

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1. Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3-4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150-400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.

• OSTI ID: 20971876
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
GALLIUM NITRIDES
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
NITROGEN
PLASMA
SEMICONDUCTOR MATERIALS