Low resistance Ti/Al/Ti-W/Au Ohmic contact to n-GaN for high temperature applications
- Departmento de Investigacion, Centro de Investigacion y Desarrollo de la Armada, Arturo Soria 289, 28033 Madrid (Spain)
Metallization schemes consisting of titanium/aluminum/titanium-tungsten/gold (Ti/Al/Ti-W/Au) were developed to Ohmic contact formation to n-GaN. The effect of Ti-W as a diffusion barrier layer on electrical and microstructural contact behaviors was evaluated. Regarding the electrical properties, excellent Ohmic contact resistances were obtained at the relatively low annealing temperature of 750 deg. C, showing values as low as 0.29{+-}0.01 {omega} mm. Intermetallic reactions formed during Ohmic contact annealing were investigated by energy dispersion spectroscopy. 'Donutlike' features appeared on the surface showing a dependence of the size/density with the Ti-W layer thickness and the alloying conditions.
- OSTI ID:
- 20971852
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 90; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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