Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation
- Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871 (Japan)
Formation of ultrathin amorphized Si layer by femtosecond laser irradiation is reported in this letter. Below the fluence of ablation threshold, femtosecond laser irradiation induced an amorphization of crystalline Si. The authors confirmed the thickness of amorphous Si layer by transmission electron microscope. The thickness of the amorphized layer was found to be quite uniform and did not depend on the number of irradiated laser pulses and fluence, which was related to the effective light penetration depth.
- OSTI ID:
- 20971794
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.2431709; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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