Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Journal Article · Mon Apr 02 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2719173· OSTI ID:20960197

Nontapot, K; Kini, R N; Gifford, A; Merritt, T R; Khodaparast, G A; Wojtowicz, T; Liu, X; Furdyna, J K ^[1]

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1. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.

• OSTI ID: 20960197
• Journal Information: Applied Physics Letters, Vol. 90, Issue 14; Other Information: DOI: 10.1063/1.2719173; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BERYLLIUM COMPOUNDS
CARRIER LIFETIME
CHARGE CARRIERS
CRYSTAL GROWTH
FERROMAGNETIC MATERIALS
INDIUM ANTIMONIDES
KERR EFFECT
LASERS
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETO-OPTICAL EFFECTS
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
OPTICAL PUMPING
RELAXATION
RELAXATION TIME
SPIN
TEMPERATURE DEPENDENCE
THIN FILMS
TIME RESOLUTION