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Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2719173· OSTI ID:20960197
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  1. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)
The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.
OSTI ID:
20960197
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 90; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English