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Title: Simple experimental method for alpha particle range determination in lead iodide films

Abstract

An experimental method for determining the range of alpha particles in films based on I-V{sub s} analysis has been suggested. The range of 5.5 MeV alpha particles in PbI{sub 2} films determined by this technique is 30{+-}5 {mu}m, and this value is in agreement with the value calculated by SRIM (the stopping and range of ions in matter), r=24 {mu}m in PbI{sub 2}. More than 100 I-V{sub s} of PbI{sub 2} films with different thicknesses and quality have been analyzed, and the influence of alpha particle radiation on PbI{sub 2} I-V{sub s} curves has been studied. Developed analytical methods (dependence of current density on electric field and conception of surface defects) were used, and the method limitations are discussed. It was shown that I-V{sub s} demonstrate the tendency to obey Ohm's law under alpha radiation. On the other hand, dark conductivity of the lead iodide films shows a typical impure character that can lead to an overestimation of the alpha particles' range in PbI{sub 2} films. After films were exposed to alpha radiation, the dark resistivity and I-V shape of some films improved. Also, a weak decrease of the charge carrier concentration, due to a decrease of the ''surface defect''more » concentration (''surface refining''), was registered after successive measurements of I-V{sub s}.« less

Authors:
; ; ; ;  [1]
  1. Radiation Monitoring Devices, Inc., Watertown, Massachusetts 02472 (United States)
Publication Date:
OSTI Identifier:
20953453
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 78; Journal Issue: 5; Other Information: DOI: 10.1063/1.2741369; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALPHA PARTICLES; CHARGE CARRIERS; CURRENT DENSITY; DIAGRAMS; ELECTRIC FIELDS; IONS; LEAD IODIDES; MEV RANGE 01-10; OHM LAW; SURFACES; THICKNESS; THIN FILMS

Citation Formats

Dmitriev, Yuri, Bennett, Paul R., Cirignano, Leonard J., Klugerman, Mikhail, and Shah, Kanai S.. Simple experimental method for alpha particle range determination in lead iodide films. United States: N. p., 2007. Web. doi:10.1063/1.2741369.
Dmitriev, Yuri, Bennett, Paul R., Cirignano, Leonard J., Klugerman, Mikhail, & Shah, Kanai S.. Simple experimental method for alpha particle range determination in lead iodide films. United States. doi:10.1063/1.2741369.
Dmitriev, Yuri, Bennett, Paul R., Cirignano, Leonard J., Klugerman, Mikhail, and Shah, Kanai S.. Tue . "Simple experimental method for alpha particle range determination in lead iodide films". United States. doi:10.1063/1.2741369.
@article{osti_20953453,
title = {Simple experimental method for alpha particle range determination in lead iodide films},
author = {Dmitriev, Yuri and Bennett, Paul R. and Cirignano, Leonard J. and Klugerman, Mikhail and Shah, Kanai S.},
abstractNote = {An experimental method for determining the range of alpha particles in films based on I-V{sub s} analysis has been suggested. The range of 5.5 MeV alpha particles in PbI{sub 2} films determined by this technique is 30{+-}5 {mu}m, and this value is in agreement with the value calculated by SRIM (the stopping and range of ions in matter), r=24 {mu}m in PbI{sub 2}. More than 100 I-V{sub s} of PbI{sub 2} films with different thicknesses and quality have been analyzed, and the influence of alpha particle radiation on PbI{sub 2} I-V{sub s} curves has been studied. Developed analytical methods (dependence of current density on electric field and conception of surface defects) were used, and the method limitations are discussed. It was shown that I-V{sub s} demonstrate the tendency to obey Ohm's law under alpha radiation. On the other hand, dark conductivity of the lead iodide films shows a typical impure character that can lead to an overestimation of the alpha particles' range in PbI{sub 2} films. After films were exposed to alpha radiation, the dark resistivity and I-V shape of some films improved. Also, a weak decrease of the charge carrier concentration, due to a decrease of the ''surface defect'' concentration (''surface refining''), was registered after successive measurements of I-V{sub s}.},
doi = {10.1063/1.2741369},
journal = {Review of Scientific Instruments},
number = 5,
volume = 78,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}