High-rate entanglement source via two-photon emission from semiconductor quantum wells
- Department of Electrical Engineering, Technion, Haifa 32000 (Israel)
We propose a compact high-intensity room-temperature source of entangled photons based on the efficient second-order process of two-photon spontaneous emission from electrically pumped semiconductor quantum wells in a photonic microcavity. Two-photon emission rate in room-temperature semiconductor devices is determined solely by the carrier density, regardless of the residual one-photon emission. The microcavity selects two-photon emission for a specific signal and idler wavelengths and at a preferred direction without modifying the overall rate. Pair-generation rate in GaAs/AlGaAs quantum well structure is estimated using a 14-band model to be 3 orders of magnitude higher than for traditional broadband parametric down-conversion sources.
- OSTI ID:
- 20951566
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 76, Issue 3; Other Information: DOI: 10.1103/PhysRevB.76.035339; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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