Room-Temperature Polariton Lasing in Semiconductor Microcavities

Journal Article · Fri Mar 23 04:00:00 EDT 2007 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.98.126405· OSTI ID:20951131

Christopoulos, S; Grundy, A J. D.; Lagoudakis, P G; Kavokin, A V; Baumberg, J J; Christmann, G; Butte, R; Feltin, E; Carlin, J -F; Grandjean, N ^[1]

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1. School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ (United Kingdom)

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 {mu}J cm{sup -2}, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of {+-}5 deg. and spatial size around 5 {mu}m.

• OSTI ID: 20951131
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 98; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ENERGY DENSITY
GALLIUM NITRIDES
INDIUM NITRIDES
LASERS
LUMINESCENCE
OPTICAL PUMPING
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STRONG-COUPLING MODEL
TEMPERATURE RANGE 0273-0400 K
THERMALIZATION