Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Fabrication and photoelectrochemical properties of porous ZnWO{sub 4} film

Journal Article · · Journal of Solid State Chemistry
Porous ZnWO{sub 4} films have been fabricated on Indium-tin oxide (ITO) glass and its photoelectrochemical properties and high photocatalytic activities towards degradation of rhodamine B (RhB) has been investigated. Using amorphous heteronuclear complex as precursor and with the addition of polyethylene glycol (PEG, molecular weight=400), the porous ZnWO{sub 4} films have been achieved at the temperature of 500 deg. C via dip-coating method. It is composed of approximately 70 nm-sized particles and exhibits substantial porosity. The textures and porosity of ZnWO{sub 4} films are dependent on preparation factors, such as the ratio of precursor/PEG and the annealing conditions. The formation mechanism of porous ZnWO{sub 4} films was proposed. The porous ZnWO{sub 4} films exhibited high photocatalytic activities towards degrading RhB. The top of valence band and the bottom of the conduction band was estimated to be -0.56 and 3.45 eV (vs. saturated calomel electrode (SCE)), respectively. -- Graphical abstract: Current vs. potential curves for ZnWO{sub 4} film treated at various temperatures: ((a) photo 500 deg. C; (b) photo 550 deg. C; (c) photo TiO{sub 2}; (d) dark 500 deg. C; (e) dark 550 deg. C; (f) dark TiO{sub 2}) in (B) in 0.5 M Na{sub 2}SO{sub 4} solution pH 6.0, scan rate=10 mV s{sup -1}.
OSTI ID:
20905409
Journal Information:
Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 8 Vol. 179; ISSN 0022-4596; ISSN JSSCBI
Country of Publication:
United States
Language:
English