Process Control in Production-Worthy Plasma Doping Technology

Journal Article · Mon Nov 13 00:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401568· OSTI ID:20891847

Winder, Edmund J; Ziwei, Fang; Arevalo, Edwin; Miller, Tim; Persing, Harold; Singh, Vikram; Parrill, T M ^[1]

---

1. Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)

As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases {approx}1x1016 ions/cm2) at low energies (<3 keV) while maintaining throughput is increasingly challenging for traditional beamline implant tools because of space-charge effects that limit achievable beam density at low energies. Plasma doping is recognized as a technology which can overcome this problem. In this paper, we highlight the technology available to achieve process control for all implant parameters associated with modem semiconductor manufacturing.

• OSTI ID: 20891847
• Journal Information: AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401568; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ION IMPLANTATION
KEV RANGE 01-10
MANUFACTURING
PERFORMANCE
PLASMA
PROCESS CONTROL
PROCESSING
SEMICONDUCTOR MATERIALS
SPACE CHARGE