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Title: Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films

Abstract

We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH{sub 3}){sub 4}, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H {sub n} and C-H {sub n} modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.

Authors:
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [2];  [2];  [4]
  1. Instituto de Ciencia de Materiales de Madrid, CSIC, Catoblanco, Madrid 28049 (Spain)
  2. NIBEC, School of Electrical and Mechanical Engineering, University of Ulster, Shore Road, Newtownabbey, County Antrim, Northern Ireland BT370QB (United Kingdom)
  3. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
  4. Department of Chemistry, Tamkang University, Tamsui 251, Taiwan (China)
Publication Date:
OSTI Identifier:
20888098
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 40; Journal Issue: 10; Other Information: DOI: 10.1016/j.materresbull.2005.05.009; PII: S0025-5408(05)00196-0; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; BONDING; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; FLOW RATE; FOURIER TRANSFORMATION; INFRARED SPECTRA; METHYL RADICALS; PHOTOLUMINESCENCE; RAMAN SPECTRA; SILICON; THIN FILMS

Citation Formats

Ray, S C, Okpalugo, T I.T., Pao, C W, Tsai, H M, Chiou, J W, Jan, J C, Pong, W F, Papakonstantinou, P, McLaughlin, J A, and Wang, W J. Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films. United States: N. p., 2005. Web. doi:10.1016/j.materresbull.2005.05.009.
Ray, S C, Okpalugo, T I.T., Pao, C W, Tsai, H M, Chiou, J W, Jan, J C, Pong, W F, Papakonstantinou, P, McLaughlin, J A, & Wang, W J. Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films. United States. doi:10.1016/j.materresbull.2005.05.009.
Ray, S C, Okpalugo, T I.T., Pao, C W, Tsai, H M, Chiou, J W, Jan, J C, Pong, W F, Papakonstantinou, P, McLaughlin, J A, and Wang, W J. Thu . "Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films". United States. doi:10.1016/j.materresbull.2005.05.009.
@article{osti_20888098,
title = {Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films},
author = {Ray, S C and Okpalugo, T I.T. and Pao, C W and Tsai, H M and Chiou, J W and Jan, J C and Pong, W F and Papakonstantinou, P and McLaughlin, J A and Wang, W J},
abstractNote = {We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH{sub 3}){sub 4}, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H {sub n} and C-H {sub n} modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.},
doi = {10.1016/j.materresbull.2005.05.009},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 10,
volume = 40,
place = {United States},
year = {2005},
month = {10}
}