Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
- Instituto de Ciencia de Materiales de Madrid, CSIC, Catoblanco, Madrid 28049 (Spain)
- NIBEC, School of Electrical and Mechanical Engineering, University of Ulster, Shore Road, Newtownabbey, County Antrim, Northern Ireland BT370QB (United Kingdom)
- Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
- Department of Chemistry, Tamkang University, Tamsui 251, Taiwan (China)
We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH{sub 3}){sub 4}, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H {sub n} and C-H {sub n} modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
- OSTI ID:
- 20888098
- Journal Information:
- Materials Research Bulletin, Vol. 40, Issue 10; Other Information: DOI: 10.1016/j.materresbull.2005.05.009; PII: S0025-5408(05)00196-0; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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