A study of interface and adhesion of c-BN film on Si(1 0 0) modified by nitrogen plasma based ion implantation technique
Cubic boron nitride (c-BN) films were deposited on Si substrate with poor adhesion using magnetically enhanced active reaction evaporation (ME-ARE). An attempt has been made to enhance the adhesion strength between c-BN film and substrate by nitrogen plasma based ion implantation (PBII) into c-BN film. Nitrogen ion doses range from 5x10{sup 16} to 1x10{sup 17} ions cm{sup -2} at an implant voltage of 50 kV. The nitrogen ion implanted c-BN films were analyzed using FTIR, scratch test, and XPS to investigate the change of structure, adhesion strength of c-BN film, and interfacial mixing between the initial turbostratic BN (t-BN) film layer and substrate caused by nitrogen ion implantation. FTIR spectra showed little change of c-BN phase content in the films under the above implantation conditions but XPS depth elemental profile of N{sup +}-implanted boron nitride films displayed a mixed layer consisting of elements from film and substrate formed at interface. A highly optimized dynamic Monte Carlo program TAMIX was used to simulate the PBII process in a good agreement with above measured depth elemental profile. The scratch test showed that the adhesion strength evaluated in terms of the critical load of N{sup +}-implanted c-BN film was 1.4 times higher than that of as deposited c-BM film.
- OSTI ID:
- 20888065
- Journal Information:
- Materials Research Bulletin, Vol. 39, Issue 7-8; Other Information: DOI: 10.1016/j.materresbull.2004.03.021; PII: S0025540804000789; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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