Influence of electron-beam and ultraviolet treatments on low-k porous dielectrics

Journal Article · Thu Dec 14 23:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2401055· OSTI ID:20884944

Martinez, E; Rochat, N; Guedj, C; Licitra, C; Imbert, G; Le Friec, Y ^[1]

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1. CEA-LETI, MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 09 (France)

The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition of the matrix and a sacrificial organic phase (porogen), postcuring treatments may be used to create porosity by evaporation of the porogen. In this paper, Auger electron spectroscopy is performed to simultaneously modify the material (e-beam cure) and measure the corresponding changes in structure and chemical composition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements in attenuated total reflection mode confirm the Auger results. The porogen removal and matrix cross-linking result in the formation of a Si-O-Si network under e-beam or ultra violet cure. The possible degradation of these materials, even after cure, is mainly due the presence of Si-C bonds.

• OSTI ID: 20884944
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CAPACITANCE
CHEMICAL BONDS
CHEMICAL COMPOSITION
CROSS-LINKING
DIELECTRIC MATERIALS
ELECTRON BEAMS
EVAPORATION
FOURIER TRANSFORM SPECTROMETERS
INFRARED SPECTRA
OXIDES
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY