Effect of ionization on femtosecond laser pulse interaction with silicon

Journal Article · Wed Nov 15 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2388853· OSTI ID:20884895

Huayu, Li; Ki, Hyungson ^[1]

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1. Department of Mechanical Engineering, Michigan State University, East Lansing, Michigan 48824-1226 (United States)

Femtosecond laser pulse interaction with silicon is studied numerically considering the ionization process induced by the intense electromagnetic field of the laser pulse. The electromagnetic field is calculated by solving Maxwell's equations using the finite-difference time-domain method, and the two-temperature model is employed for the electron-lattice energy coupling. The electron number density is computed by an ionization model based on the energy balance of laser energy; the electrical conductivity of the dense plasma is predicted accounting for the number density and temperature of electrons. This article presents some interesting results on electromagnetic field in the silicon substrate, electron and lattice temperatures, electrical conductivity, and electron number density depending on laser pulse energy and pulse width. In particular, this study explains some physical phenomena pertaining only to femtosecond laser pulses, such as existence of threshold intensity.

• OSTI ID: 20884895
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC CONDUCTIVITY
ELECTROMAGNETIC FIELDS
ELECTRON TEMPERATURE
ENERGY BALANCE
LASERS
LIGHT TRANSMISSION
MAXWELL EQUATIONS
PHOTOIONIZATION
PLASMA
PLASMA DENSITY
PLASMA PRODUCTION
PULSES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES