A triple axis mode X-ray diffraction measurement on elastic strain distribution of lightly Cr-doped SI-GaAs for laser windows

Journal Article · Mon Mar 24 00:00:00 EST 2003 · Materials Research Bulletin

OSTI ID:20884654

Jianming, Li; Hailing, Tu; Guangyong, Hu; Chaoqun, Wang; Ansheng, Zheng; Jiayu, Qian

The triple axis mode X-ray diffraction method is described, which has been used to measure the spatial variation in the lattice parameters of (1 0 0) lightly Cr-doped SI-GaAs laser windows. It has been found that a remarkable spatial variation of elastic strain exists in the window wafer. The results show that the thinner the wafer is, the smaller the stress spatial variation in the wafer. The elastic strain in the window wafer can be released by thermal annealing. The method can also be applicable to the precise lattice parameter measurements of the compound materials.

• OSTI ID: 20884654
• Journal Information: Materials Research Bulletin, Vol. 38, Issue 4; Other Information: DOI: 10.1016/S0025-5408(02)01065-6; PII: S0025540802010656; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHROMIUM
DOPED MATERIALS
GALLIUM ARSENIDES
LASERS
LATTICE PARAMETERS
STRAINS
X-RAY DIFFRACTION