Formation of p-type MgZnO by nitrogen doping

Journal Article · Mon Sep 04 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2345846· OSTI ID:20883214

Wei, Z P; Yao, B; Zhang, Z Z; Lu, Y M; Shen, D Z; Li, B H; Wang, X H; Zhang, J Y; Zhao, D X; Fan, X W; Tang, Z K ^[1]

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1. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dongnanhu Road, Changchun 130033 (China)

A wurtzite N-doped MgZnO film with 20 at. % Mg (MgZnO:N) was grown by plasma-assisted molecular beam epitaxy on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown MgZnO:N film behaves n-type conduction at room temperature, but transforms into p-type conduction after annealed for 1 h at 600 deg. C in an O{sub 2} flow. The p-type MgZnO:N has a hole concentration of 6.1x10{sup 17} cm{sup -3} and a mobility of 6.42 cm{sup 2}/V s. X-ray photoelectron spectroscopy measurement indicates that substitution of N for O site is in forms of N atom (N){sub O} and N molecule (N{sub 2}){sub O} for the as-grown MgZnO:N, but almost only in a form of (N){sub O} for the annealed MgZnO:N. The mechanism of the conduction-type transition induced by annealing is discussed in the present work.

• OSTI ID: 20883214
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HOLE MOBILITY
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITRIC OXIDE
NITROGEN
OXYGEN
PLASMA
RADICALS
SAPPHIRE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES